PART |
Description |
Maker |
PTFA220121M |
High Power RF LDMOS Field Effect Transistor 12 W, 700-2200 MHz
|
Infineon Technologies AG
|
PTFA220081M |
High Power RF LDMOS Field Effect Transistor 8 W, 700-2200 MHz
|
Infineon Technologies AG
|
PTF080601F PTF080601E PTF080601A PTF080601 |
LDMOS RF Power Field Effect Transistor 60 W, 860-960 MHz LDMOS射频功率场效应晶体管60瓦,860-960兆赫 LDMOS RF Power Field Effect Transistor 60 W 860-960 MHz LDMOS RF Power Field Effect Transistor 60 W/ 860-960 MHz
|
INFINEON[Infineon Technologies AG]
|
PTFB241402FV1R250 |
High Power RF LDMOS Field Effect Transistor 140 W, 2300 ?2400 MHz
|
Infineon Technologies A...
|
BLF872 BLF872-2015 |
UHF power LDMOS transistor UHF power LDMOS transistor - Description: UHF LDMOS POWER Transistor ; Efficiency: 55 %; Frequency band: 470-860 GHz; Output power: 300 W; Package material: SOT800A ; Power gain: 16.5 dB
|
NXP Semiconductors Quanzhou Jinmei Electro...
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PTF080101S PTF080101 |
LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W, 860-960MHZ LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W 860-960MHZ LDMOS RF POWER FIELD EFFECT TRANSISTOR 10W/ 860-960MHZ
|
INFINEON[Infineon Technologies AG]
|
PTF211802A PTF211802E PTF211802 |
LDMOS RF Power Field Effect Transistor 180 W 2110-2170 MHz LDMOS RF POWER FIELD EFFECT TRANSISTOR 180 W, 2110-2170 MHZ LDMOS RF Power Field Effect Transistor 180 W/ 2110-2170 MHz
|
http:// INFINEON[Infineon Technologies AG]
|
MAPL-000817-015C00 |
RF Power Field Effect Transistor LDMOS, 800-1700 MHz, 15W, 26V
|
Tyco Electronics
|
BLF6G21-10G |
Power LDMOS transistor 10 W LDMOS power transistor for base station applications at frequencies from HF to 2200 MHz.
|
NXP Semiconductors N.V.
|
IFS75S12N3T4B11 |
High Power RF LDMOS FETs
|
Infineon Technologies AG
|
PTFB090901FAV2R0 PTFB090901FAV2R250XTMA1 PTFB09090 |
Thermally-Enhanced High Power RF LDMOS FETs
|
Infineon Technologies A...
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